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Intel and Micron have reached a new breakthrough in NAND flash production. The 25nm NAND flash process will enable the manufacturers to double current flash memory capacity, or squeeze the same memory into half the space, enabling advances in storage capacity for the devices that business professionals rely on.
A joint statement from Intel and Micron says “Manufactured by IM Flash Technologies (IMFT), Intel and Micron’s NAND flash joint venture, the 25nm process produces 8 gigabytes (GB) of storage in a single NAND device, creating a high-capacity storage solution for today’s tiny consumer gadgets. It measures just 167mm2 — small enough to fit through the hole in the middle of a compact disc (CD), yet packs more than 10 times the data capacity of that CD (a standard CD holds 700 megabytes of data).”
read full article: Intel and Micron Double Flash Storage Capacity With 25-Nanometer NAND
pcworld.com

